Substrate processing apparatus, plurality of electrodes and method of manufacturing semiconductor device

A plurality of electrodes, comprising:

• at least two electrodes to which a predetermined potential is applied;
• and
• at least one electrode to which a reference potential is applied,
• wherein the plurality of electrodes are configured to generate plasma in a process chamber,
• wherein a surface area of the at least two electrodes to which the predetermined potential is applied is two times or more than a surface area of the at least one electrode to which the reference potential is applied,
• wherein the at least one electrode to which the reference potential is applied is arranged to be sandwiched between two sets of the at least two electrodes to which the predetermined potential is applied, and
• wherein each set consists of two or more electrodes, among the at least two electrodes to which the predetermined potential is applied, which are arranged continuously.

A method of manufacturing a semiconductor device, comprising:

• loading a substrate into a substrate processing apparatus, the apparatus comprising:
• a reaction tube configured to form a process chamber in which the substrate is processed;
• and
• a plurality of electrodes including at least two electrodes to which a predetermined potential is applied and at least one electrode to which a reference potential is applied, and a surface area of the at least two electrodes to which the predetermined potential is applied being two times or more than a surface area of the at least one electrode to which the reference potential is applied, wherein the at least one electrode to which the reference potential is applied is arranged to be sandwiched between two sets of the at least two electrodes to which the predetermined potential is applied, and wherein each set consists of two or more electrodes, among the at least two electrodes to which the predetermined potential is applied, which are arranged continuously;
• processing the substrate by generating plasma in the process chamber;
• and
• transferring the substrate from the process chamber.