Etching method and etching apparatus

An etching method, comprising:

• a) placing a substrate on a support the substrate including a target film;
• b) partially etching the target film and forming a recess therein;
• c) setting a temperature of the support at a first temperature, and forming a first film on a sidewall of the recess, the first film having a first film thickness distribution:
• d) partially further etching the target film after the first film has been formed on the recess of the target film;
• and
• e) setting the temperature of the support at a second temperature different from the first temperature, and forming a second film on the sidewall of the recess, the second film having a second film thickness distribution different from the first film thickness distribution wherein
• c) includes
• c-1) supplying a first reactant and causing the first reactant to be adsorbed on the sidewall of the recess, and
• c-2) supplying a second reactant and causing the second reactant to react with the first reactant to form the first film,
• e) includes
• e-1) supplying a third reactant and causing the third reactant to be adsorbed on the sidewall of the recess, and
• e-2) supplying a fourth reactant and causing the fourth reactant to react with the third reactant to form the second film, and
• c-2) is performed fir a duration different from a duration of e-2) so as to form the first film to have at least one of a thickness or a position different from a corresponding thickness or position of the second film.

An etching method, comprising:

• a) placing a substrate on a support, the substrate including a target film;
• b) partially etching the target film and forming a recess therein by a plasma generated from a first gas;
• c) setting temperatures of at least two of a plurality of zones of the support to different temperatures after performing the partial etching, and forming a film on a sidewall of the recess by introduction of a second gas different from the first gas, the film having different film thickness distributions, in a depth direction, in areas corresponding with the at least two of the plurality of zones;
• and
• d) partially further etching the target film after the film has been formed on the recess of the target film by a plasma generated from a third gas different from the second gas.