Method for fabricating semiconductor device using tilted etch process

A method for fabricating a semiconductor device, comprising:

• providing a target layer;
• forming a first hard mask layer on the target layer;
• forming second hard mask layers on the first hard mask layer;
• and
• performing a first tilted etch process on the first hard mask layer to form first openings along the first hard mask layer and adjacent to first sides of the second hard mask layers;
• performing a 180 degree rotation to the target layer;
• and
• performing a third tilted etch process on the first hard mask layer to form third openings along the first hard mask layer and adjacent to second sides of the second hard mask layers;
• wherein an angle of incidence of the first tilted etch process is equal to an angle of incidence of the third tilted etch process.

A method for fabricating a semiconductor device, comprising:

• providing a target layer;
• forming a first hard mask layer on the target layer;
• forming second hard mask layers on the first hard mask layer;
• and
• performing a first tilted etch process on the first hard mask layer to form first openings along the first hard mask layer and adjacent to first sides of the second hard mask layers;
• wherein the first tilted etch process uses the second hard mask layers as pattern guides.