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US 11,380,549 B2Granted
Semiconductor device with a work function layer having a concentration of fluorine
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJung-Shiung Tsai, Chung-Chiang Wu, Wei-Fan Liao, Han-Ti Hsiaw
Life of this patent
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Abstract
A semiconductor device and method of manufacture are provided. In an embodiment a metal layer is formed over a substrate using a fluorine-free deposition process, a nucleation layer is formed over the metal layer using a fluorine included deposition process, and a fill material is formed to fill an opening and form a gate stack.
Claims20
A semiconductor device comprising:
- a multi channel semiconductor region adjacent to a high-k dielectric layer;
- a work function layer over the high-k dielectric layer, the work function layer having an atomic concentration of fluorine between about 0.1%-atomic and about 1.5%-atomic;
- a fill material over the work function layer;
- a nucleation layer between the work function layer and the fill material;
- and
- a crystalline metal layer between the nucleation layer and the work function layer.
3 more elements
A semiconductor device comprising:
- a channel region located within a semiconductor fin over a substrate;
- a gate dielectric overlying the semiconductor fin adjacent to the channel region;
- a work function layer adjacent to the gate dielectric, the work function layer having a concentration gradient of fluorine, the concentration gradient of fluorine having a maximum concentration no greater than 1.5%-atomic;
- and
- a first barrier layer over the work function layer;
- and
- a fill material adjacent to the first barrier layer, the fill material comprising fluorine at a higher concentration than the maximum concentration within the work function layer.
4 more elements
A semiconductor device comprising:
- a high-K dielectric layer over a substrate;
- a first barrier layer over the high-K dielectric layer;
- a work function layer over the high-K dielectric layer;
- a second barrier layer over the work function layer;
- a conductive layer over the second barrier layer;
- a first metal layer over the conductive layer, the first metal layer comprising a fluorine by-product;
- and
- a second metal layer over the first metal layer, the second metal layer comprising a fluorine by-product, wherein the second metal layer has a concentration of fluorine that is greater than 1.5%-atomic and also has a concentration of fluorine that is greater than the work function layer.
5 more elements
Dependencies are inferred from the claim text.