Method of manufacturing semiconductor structure through multi-implantation to fin structures
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Chung Chen, Chung-Hao Chu, Chi-Feng Huang, Victor Chiang Liang
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a semiconductor structure, comprising providing a substrate; forming a fin structure over the substrate; depositing an insulation material over the fin structure; performing a plurality of ion implantations in-situ with implantation energy increased or decreased stepwise; and removing at least a portion of the insulation material to expose a portion of the fin structure.
Claims20
A method of manufacturing a semiconductor structure, comprising:
- providing a substrate;
- forming a plurality of fin structures over the substrate;
- depositing an insulation material over the fin structures to fill gaps between the fin structures with the insulation material;
- applying a plurality of ion implantations to the fin structures in-situ with implantation energies increased or decreased stepwise;
- and
- removing at least a portion of the insulation material to expose at least the top surface of each fin structure;
- wherein applying the plurality of ion implantations comprises:
- performing a first ion implantation with a first implantation energy to form a first implanted region of the fin structures;
- performing a second ion implantation with a second implantation energy to form a second implanted region of the fin structures;
- and
- performing a third ion implantation with a third implantation energy to form a third implanted region of the fin structures.
A method of manufacturing a semiconductor structure, comprising:
- providing a substrate;
- forming a plurality of fin structures over the substrate;
- depositing an insulation material over the fin structures to fill gaps between the fin structures with the insulation material;
- applying a plurality of ion implantations to the fin structures in-situ with stepwise increased or decreased energy and in a stepwise increased or decreased temperature;
- and
- removing at least a portion of the insulation material to expose at least the top surface of each fin structure;
- wherein applying the plurality of ion implantations comprises:
- performing a first ion implantation with a first implantation energy to form a first implanted region of the fin structures;
- performing a second ion implantation with a second implantation energy to form a second implanted region of the fin structures;
- and
- performing a third ion implantation with a third implantation energy to form a third implanted region of the fin structures.
A method of manufacturing a semiconductor structure, comprising:
- providing a substrate;
- forming a plurality of fin structures over the substrate;
- depositing an insulation material over the fin structures to fill gaps between the fin structures with the insulation material;
- applying a first ion implantation to the fin structures with a first implantation energy to form a first implanted region of the fin structures;
- applying a second ion implantation to the fin structures with a second implantation energy to form a second implanted region of the fin structures;
- applying a third ion implantation to the fin structures with a third implantation energy to form a third implanted region of the fin structures;
- and
- removing at least a portion of the insulation material to expose at least the top surface of each fin structure,
- wherein the first implantation energy is greater than the second implantation energy, and the second implantation energy is greater than the third implantation energy;
- and
- wherein each of the plurality of ion-implantations is applied with a tilt angle with respect to the vertical axis from about 5° to about 70°.
Dependencies are inferred from the claim text.