Plasma processing method and plasma processing apparatus
AssigneeTokyo Electron Limited
InventorsRyo Terashima, Yuzuru Sakai
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Abstract
A plasma processing method of etching an organic film through a mask having an opening is provided. The mask is formed on the organic film, and is made of a silicon-containing film. The method includes rectifying a shape of the mask. The rectifying of the shape of the mask includes refining a side wall of the opening of the mask, and etching an upper surface of the mask.
Claims19
A method of etching an organic film by a plasma through a mask having an opening, the mask being formed on the organic film and being made of a silicon-containing film, the method comprising rectifying a shape of the mask;
- wherein the rectifying of the shape of the mask includes
- changing a chemical composition of a side wall of the opening of the mask to a different chemical composition, without etching the side wall, and
- etching an upper surface of the mask, and
- wherein the side wall of the opening of the mask is changed to SiC, in the changing of the chemical composition of the side wall of the opening of the mask.
A method of etching an organic film by a plasma through a mask having an opening, the mask being formed on the organic film and being made of a silicon-containing film, the method comprising rectifying a shape of the mask;
- wherein the rectifying of the shape of the mask includes
- changing a chemical composition of a side wall of the opening of the mask to a different chemical composition, without etching the side wall, and
- etching an upper surface of the mask,
- wherein the changing of the chemical composition of the side wall of the opening of the mask and the etching of the upper surface of the mask are performed simultaneously.
A method of etching an organic film by a plasma through a mask having an opening, the mask being formed on the organic film and being made of a silicon-containing film, the method comprising rectifying a shape of the mask;
- wherein the rectifying of the shape of the mask includes
- refining a side wall of the opening of the mask, and
- etching an upper surface of the mask,
- wherein the refining of the side wall of the opening of the mask includes
- etching the organic film using a plasma formed from a process gas, and
- refining the side wall using reaction products generated by the etching of the organic film using the plasma formed from the process gas.
Dependencies are inferred from the claim text.