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US 11,380,545 B2Granted
Processing method and substrate processing apparatus
AssigneeTokyo Electron Limited
InventorsShota Yoshimura, Kiyohito Ito
Life of this patent
Estimating the term…
Abstract
There is provision of a processing method including a) depositing deposits on a patterned mask layer formed over an etching film; b) removing a part of the mask layer, a part of the deposits, or both the part of the mask layer and the part of the deposits; and c) repeating a) and b) at least once, thereby causing a taper angle of a side surface of a pattern formed in the mask layer to be a desired angle.
Claims13
A processing method comprising:
- a) providing a substrate having a mask layer that is disposed over a surface of the substrate, the mask layer having a first hole and a second hole extending therethrough, an opening of the first hole being larger than an opening of the second hole;
- b) depositing a first deposit on a side surface of the first hole and a second deposit on a side surface of the second hole by use of a plasma of at least one of CH4 gas, H2 gas, Ar gas, N2 gas, CH3F gas, CH2F2 gas, or C4F8 gas, the first deposit having a greater maximum thickness than the second deposit;
- c) reducing the respective thicknesses of the first and second deposits by substantially the same amount by use of a plasma of at least one of CO2 gas, CH4 gas, or CO gas;
- and
- d) repeating b) and c) at least once, thereby causing a taper angle of the side surface of the first hole and a taper angle of the side surface of the second hole to be within a specified range of angles, and reducing variation in size of respective openings of the first hole.
2 more elements
A substrate processing apparatus comprising:
- a processing vessel;
- and
- a controller configured to control a process performed in the processing vessel, the process being applied to a substrate having a mask layer that is disposed over a surface of the substrate;
- wherein the process includes
- a) providing the substrate having the mask laver, the mask layer having a first hole and a second hole extending therethrough, an opening of the first hole being larger than an opening of the second hole;
- b) depositing a first deposit on a side surface of the first hole and a second deposit on a side surface of the second hole by use of a plasma of at least one of CH4 gas, H2 gas, Ar gas, N2 gas, CH3F gas, CH2F2 gas, or C4F8 gas, the first deposit having a greater maximum thickness than the second deposit;
- c) reducing the respective thicknesses of the first and second deposits by substantially the same amount by use of a plasma of at least one of CO2 gas, CH4 gas, or CO gas;
- and
- d) repeating b) and c) at least once, thereby causing a taper angle of the side surface of the first hole and a taper angle of the side surface of the second hole to be within a specified range of angles, and reducing variation in size of respective openings of the first hole and the second hole.
6 more elements
Dependencies are inferred from the claim text.