Selective deposition of silicon nitride
AssigneeEntegris, Inc.
InventorsHan Wang, Bryan C. Hendrix, Eric Condo, Thomas H. Baum
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Abstract
Certain embodiments of the invention utilize low temperature atomic layer deposition methodology to form material containing silicon and nitrogen (e.g., silicon nitride). The atomic layer deposition uses silicon tetraiodide (SiI4) or disilicon hexaiodide (Si2I6) as one precursor and uses a nitrogen-containing material such as ammonia as another precursor. In circumstances where a selective deposition of silicon nitride is desired to be deposited over silicon dioxide, the substrate surface is first treated with ammonia plasma.
Claims19
A process for selectively depositing silicon nitride on a microelectronic device substrate having a plurality of surfaces of differing composition, which comprises contacting said substrate with sequentially pulsed silicon tetraiodide or disilicon hexaiodide, and nitrogen-containing co-reactants, at a temperature of about 150° C. to about 400° C., and at a pressure below about 15 Torr, under atomic layer deposition conditions, wherein the Si source is heated above the melting point and vaporized with a carrier gas.
A process for selectively depositing silicon nitride on a microelectronic device substrate having a plurality of surfaces of differing composition, which comprises contacting said substrate with sequentially pulsed silicon tetraiodide or disilicon hexaiodide, and nitrogen-containing co-reactants, at a temperature of about 150° C. to about 400° C., and at a pressure below about 15 Torr, under atomic layer deposition conditions and further comprising the step of pre-treating said substrate with ammonia plasma, and wherein the surface to be deposited thereon is chosen from silicon dioxide, germanium dioxide, SiCO, and low-k substrates.
A process for selectively depositing silicon nitride on a microelectronic device substrate having a plurality of surfaces of differing composition, which comprises contacting said substrate with sequentially pulsed silicon tetraiodide or disilicon hexaiodide, and nitrogen-containing co-reactants, at a temperature of about 150° C. to about 400° C., and at a pressure below about 15 Torr, under atomic layer deposition conditions, wherein said device substrate comprises some surfaces chosen from silicon nitride, titanium nitride, tantalum nitride, and aluminum nitride, hafnium oxide, zirconium oxide, aluminum oxide and combinations thereof, which have enhanced deposition of silicon nitride compared to other surfaces on the same substrate chosen from silicon dioxide, germanium dioxide, SiCO, and low-k substrates which have suppressed deposition of silicon nitride.
Dependencies are inferred from the claim text.