Method of forming nitride film and apparatus for forming nitride film
AssigneeTokyo Electron Limited
InventorHiroki Murakami
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Abstract
A nitride film forming method includes repeating a cycle a plurality of times, wherein the cycle includes: forming a layer containing an element to be nitrided on a substrate by supplying a source gas including the element to the substrate; plasmarizing a modifying gas including a hydrogen gas, and modifying the layer containing the element with the plasmarized modifying gas; and activating a nitriding gas including nitrogen by heat, and thermally nitriding the layer containing the element with the nitriding gas activated by heat.
Claims14
A nitride film forming method comprising repeating a cycle a plurality of times, the cycle comprising:
- forming a layer containing an element to be nitrided on a substrate by supplying a source gas including the element to the substrate;
- plasmarizing a modifying gas including a hydrogen gas, and modifying the layer containing the element with the plasmarized modifying gas;
- and
- activating a nitriding gas including nitrogen by heat, and thermally nitriding the layer containing the element with the nitriding gas activated by heat without plasmarizing the nitriding gas,
- wherein the layer containing the element includes a halogen element,
- wherein the modifying the layer containing the element includes removing the halogen element included in the layer containing the element, and
- wherein the plasmarizing the modifying gas includes supplying the modifying gas,
- wherein the activating the nitriding gas includes supplying the nitriding gas,
- wherein, in the supplying the source gas, the supplying the modifying gas and the supplying the nitriding gas are not performed,
- wherein, in the supplying the modifying gas, the supplying the source gas and the supplying the nitriding gas are not performed, and
- wherein, in the supplying the nitriding gas, the supplying the source gas and the supplying the modifying gas are not performed.
A nitride film forming method comprising repeating a cycle a plurality of times, the cycle comprising:
- forming a layer containing an element to be nitrided on a substrate by supplying a source gas including the element to the substrate;
- plasmarizing a modifying gas including an inert gas, and modifying the layer containing the element with the plasmarized modifying gas;
- and
- activating a nitriding gas including nitrogen by heat, and thermally nitriding the layer containing the element with the nitriding gas activated by heat without plasmarizing the nitriding gas,
- wherein the layer containing the element includes a halogen element,
- wherein the modifying the layer containing the element includes removing the halogen element included in the layer containing the element, and
- wherein the plasmarizing the modifying gas includes supplying the modifying gas,
- wherein the activating the nitriding gas includes supplying the nitriding gas,
- wherein, in the supplying the source gas, the supplying the modifying gas and the supplying the nitriding gas are not performed,
- wherein, in the supplying the modifying gas, the supplying the source gas and the supplying the nitriding gas are not performed, and
- wherein, in the supplying the nitriding gas, the supplying the source gas and the supplying the modifying gas are not performed.
Dependencies are inferred from the claim text.