Method of manufacturing a semiconductor device and a cleaning composition for an adhesive layer

A cleaning composition for an adhesive layer, the cleaning composition comprising:

• a polar solvent which is a mixture of a ketone compound and an acetate-based compound, the polar solvent having a content that is equal to or greater than 40 wt % and less than 90 wt %;
• a quaternary ammonium salt selected from tetramethylammonium hydroxide, tetramethylammonium phosphate, dicyclohexylammonium nitride, or any combination thereof;
• a primary amine selected from 2-aminoethanol, benzylamine, ethylene diamine, butyldiethanolamine, butylamine, cyclohexylamine, or any combination thereof;
• a hydroxyl-benzene-based compound, a content of the hydroxyl-benzene-based compound ranging from 0.1 wt % to 20 wt %;
• an inorganic acid having a content that ranges from 1 wt % to 15 wt %;
• wherein a sum of a content of the quaternary ammonium salt and a content of the primary amine ranges from 1 wt % to 30 wt %;
• wherein the inorganic acid is selected from phosphoric acid, acetic acid, silicic acid, hexafluorophosphoric acid, or any combination there, wherein the hydroxyl-benzene-based comprises at least one of 4-hydroxybenzenesulfonic acid, catechol, hydroquinone, pyrogallol, gallic acid, methylgallate, ethylgallate, or n-propylgallate;
• wherein a weight ratio of the quaternary ammonium salt to the primary amine ranges from 3:1 to 1:3;
• wherein a pH of the cleaning composition ranges from 7 to 8;
• and
• wherein the quaternary ammonium salt and the primary amine are capable of reacting with a polymer adhesive residue to form an imine.