Plasma processing apparatus
AssigneeTokyo Electron Limited
InventorRyo Sasaki
Life of this patent
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Abstract
A plasma processing apparatus includes a substrate support having a substrate supporting portion on which a substrate is placed and a peripheral portion surrounding the substrate supporting portion, a conductive focus ring placed on the peripheral portion of the substrate support, a cover ring surrounding an outer periphery of the substrate support and formed of a dielectric material, a conductive ring placed on the cover ring, and a radio frequency power supply electrically coupled to the substrate support. A first surface on an outer peripheral portion of the focus ring and a second surface on an inner peripheral portion of the conductive ring are spaced apart from each other while facing each other. Further, the cover ring has a spacing portion that separates the focus ring from the conductive ring.
Claims19
A plasma processing apparatus comprising:
- a substrate support having a substrate supporting portion on which a substrate is placed and a peripheral portion surrounding the substrate supporting portion;
- a conductive focus ring placed on the peripheral portion of the substrate support;
- a cover ring surrounding an outer periphery of the substrate support and formed of a dielectric material;
- a conductive ring placed on the cover ring;
- and
- a radio frequency power supply electrically coupled to the substrate support,
- wherein a first surface on an outer peripheral portion of the focus ring and a second surface on an inner peripheral portion of the conductive ring are spaced apart from each other while facing each other, and
- the cover ring has a spacing portion that separates the focus ring from the conductive ring.
Dependencies are inferred from the claim text.