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US 11,380,486 B2Granted
Capacitor
AssigneeSTMicroelectronics (Tours) SAS
InventorMohamed Boufnichel
Life of this patent
Estimating the term…
Abstract
A vertical capacitor includes a stack of layers conformally covering walls of a first material. The walls extend from a substrate made of a second material different from the first material.
Claims20
A vertical capacitor, comprising:
- a substrate defining a cavity, the substrate made of a first material;
- a plurality of insulating layers spaced apart from each other within the cavity of the substrate, the plurality of insulating layers made of a second material different from the first material, each of the insulating layers having a first inclined wall, a second inclined wall, and a bottom surface between the first and second inclined walls, the bottom surface of the insulating layer on a first portion of a surface of the substrate in the cavity;
- a stack of layers conformally covering the plurality of insulating layers and a first surface and a second surface opposite the first surface of each of the first and second inclined walls of the plurality of insulating layers and conformally covering a second portion of the surface of the substrate in the cavity, the stack of layers including at least one insulating layer and two conductive layers,
- wherein a first lateral distance between two adjacent insulating layers at the surface of the substrate in the cavity is greater than a second lateral distance between the two adjacent insulating layers at upper surfaces of the two adjacent insulating layers opposite the surface of the substrate in the cavity.
1 more element
A method of manufacturing a capacitor comprising:
- forming a cavity within a substrate;
- forming a plurality of insulating layers spaced apart from each other within the cavity of the substrate, each of the plurality of insulating layers having a first inclined wall, a second inclined wall, and a bottom surface between the first and second inclined walls, the bottom surface of the insulating layer on a portion of a surface of the substrate in the cavity;
- forming a stack of layers extending over the plurality of insulating layers and a first surface and a second surface opposite the first surface of the first and second inclined walls of the plurality of insulating layers;
- and
- forming the stack of layers on a second portion of the surface of the substrate in the cavity,
- wherein the first and second inclined walls are a first material and the substrate is a second material, the first and second materials being different,
- wherein a distance between two adjacent inclined walls gradually decreases as the inclined walls extend further away from the substrate.
4 more elements
A method, comprising:
- forming an insulating layer on a surface of a substrate;
- removing portions of the insulating layer to leave remaining portions of the insulating layer on the surface of the substrate, regions of the substrate in which cavities are to be formed being defined between adjacent remaining portions of the insulating layer;
- forming a selective layer on the remaining portions of the insulating layer, the selective layer being a material capable of being selectively etched and that cannot be oxidized;
- forming the selective layer on portions of the surface of the substrate in the regions where cavities are to be formed, openings being defined between the selective layer on the portions of the surface of the substrate where cavities are to be formed;
- forming a second insulating layer over the selective layer;
- forming cavities in the substrate at the openings of the portions of the surface of the substrate where the cavities are to be formed;
- removing the second insulating layer and selective layer between the cavities;
- removing portions of the substrate between the cavities;
- and
- conformally forming a stack of layers over walls of the cavities and walls of the removed portions of the substrate between the cavities.
7 more elements
Dependencies are inferred from the claim text.