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US 11,380,482 B2Granted
Dielectric composition and electronic component
AssigneeTDK Corporation
InventorsShota Suzuki, Nobuyuki Okuzawa, Daisuke Hirose, Shirou Ootsuki, Wakiko Sato
Life of this patent
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Abstract
A dielectric composition including a complex oxide containing bismuth, zinc, and niobium, includes a crystal phase formed of the complex oxide and having a pyrochlore type crystal structure, and an amorphous phase. When the complex oxide is represented by a composition formula BixZnyNbzO1.75+δ, in which x, y, and z satisfy relations of x+y+z=1.00, 0.20≤y≤0.50, and 2/3≤x/z≤3/2.
Claims14
A dielectric composition comprising a complex oxide containing bismuth, zinc, and niobium, wherein
- dielectric composition comprises a crystal phase formed of the complex oxide and having a pyrochlore type crystal structure, and an amorphous phase, and
- the complex oxide is represented by a composition formula BixZnyNbzO1.75+δ, in which x, y, and z satisfy relations of x+y+z=1.00, 0.20≤y≤0.50, and 2/3≤x/z≤3/2.
A dielectric composition comprising a complex oxide containing bismuth, zinc, and niobium, wherein
- the complex oxide is represented by a composition formula BixZnyNbzO1.75+δ, in which x, y, and z satisfy relations of x+y+z=1.00, 0.20≤y≤0.50, and 2/3≤x/z≤3/2, and
- in an X-ray diffraction chart of the dielectric composition obtained by an X-ray diffraction measurement using a Cu—Kα ray as an X-ray source, a half-value width of a diffraction peak of a (222) plane that appears in a range of a diffraction angle 2θ of 27° or more and 30° or less is 0.35° or more and 2.0° or less.
Dependencies are inferred from the claim text.