8T dual port SRAM and a manufacturing method thereof

A method for manufacturing an eight-transistor dual port SRAM, comprising:

• generating a circuit structure of the SRAM on a substrate, wherein the circuit structure comprises:
• a first pass gate transistor, a drain of the first pass gate transistor is used as a first read/write port of a first group of read/write dual ports of the SRAM, and a source of the first pass gate transistor is connected to an internal node of the SRAM;
• a second pass gate transistor, a drain of the second pass gate transistor is used as a second read/write port of the first group of read/write dual ports, and a source of the second pass gate transistor is connected to an inverting internal node of the SRAM;
• a third pass gate transistor, a drain of the third pass gate transistor is used as a first read/write port of a second group of read/write dual ports of the SRAM, and a source of the third pass gate transistor is connected to the inverting internal node;
• and
• a fourth pass gate transistor, a drain of the fourth pass gate transistor is used as a second read/write port of the second group of read/write dual ports, and a source of the fourth pass gate transistor is connected to the internal node of the SRAM;
• and
• performing ion implantation on the first pass gate transistor, the second pass gate transistor, the third pass gate transistor, and the fourth pass gate transistor, making on-resistance of the second pass gate transistor smaller than that of the first pass gate transistor, so that a first read current flowing from the first read/write port of the first group of read/write dual ports is equal to a second read current flowing from the second read/write port of the first group of read/write dual port, and making on-resistance of the fourth pass gate transistor smaller than that of the third pass gate transistor, so that a third read current flowing from the first read/write port of the second group of read/write dual ports is equal to a fourth read current flowing from the second read/write port of the second group of read/write dual port.