Multiplexor for a semiconductor device

A method of operating a memory device, comprising:

• activating a vertical sense line coupled to a vertical stack of the memory device to store data in a memory cell of the vertical stack;
• activating a second portion of a multiplexor coupled to the vertical stack to transfer the stored data to a horizontal sense line, wherein the second portion of the multiplexor is selector semiconductor under the array (SuA) circuitry coupled to the vertical sense line and the horizontal sense line;
• and
• activating a multiplexor switch of a first portion of the multiplexor, wherein a first terminal of the multiplexor switch is coupled to the vertical sense line and a second terminal of the multiplexor switch is coupled to a vertical portion of a storage node of the vertical stack.

A method of sensing a memory cell in an array of memory cells, comprising:

• activating a particular horizontal access line coupled to the memory cell, wherein the particular horizontal access line is one of a plurality of respective horizontal access lines;
• electrically coupling a vertical sense line to a horizontal sense line via a second portion of a multiplexor in the array of memory cells, wherein:
• the multiplexor includes a first portion that is coupled to the array of memory cells and configured to couple the vertical sense line to a vertical portion of a storage node;
• and
• the second portion of the multiplexor is selector semiconductor under the array (SuA) circuitry and the vertical sense line is coupled to the memory cell;
• and
• sensing the memory cell with a sense amplifier in the SuA circuitry, wherein the sense amplifier is coupled to the horizontal sense line.