Nonvolatile memory device including sensing time control circuit and operating method thereof

An operating method of a nonvolatile memory device, the method comprising:

• performing, at a page buffer circuit, a first sensing operation on a first page;
• performing, at the page buffer circuit, a second sensing operation on a second page;
• and
• performing, at an input/output circuit, a first data output operation for the first page while performing the second sensing operation,
• performing, at the page buffer circuit, a third sensing operation on a third page;
• and
• performing, at the input/output circuit, a second data output operation for the second page while the third sensing operation is performed,
• wherein the first sensing operation is performed for a first time duration, and the second sensing operation is performed for a second time duration shorter than the first time duration,
• wherein the third sensing operation is performed for a third time duration shorter than the first time duration, and
• wherein, when a data output count value during the first data output operation is a first value and a data output count value during the second data output operation is a second value greater than the first value, the third time duration is shorter than the second time duration.

A nonvolatile memory device comprising:

• a memory cell array including a first plane and a second plane;
• a first page buffer connected with the first plane through first bit lines and configured to perform a first sensing operation on the first plane during a first sensing time period;
• a second page buffer connected with the second plane through second bit lines and configured to perform a second sensing operation on the second plane during a second sensing time period;
• an input/output circuit configured to perform a first data output operation of outputting data from the first page buffer to an external device through data lines and a second data output operation of outputting data from the second page buffer to an external device through data lines;
• and
• a sensing time control circuit configured to adjust the second sensing time period based on the first data output operation during the second sensing operation,
• wherein while a data output operation is not performed, the sensing time control circuit controls the first page buffer to perform the first sensing operation during the first sensing time period having a first length of time, and
• wherein while the first data output operation is performed, the sensing time control circuit controls the second page buffer to perform the second sensing operation during the second sensing time period having a second length of time different from the first length of time.