US 11,380,373 B1 · Memory with read circuit for current-to-voltage slope characteristic-based sensing and method

Abstract

Disclosed is a memory structure including an array of memory cells and a read circuit. The read circuit includes two registers configured to capture and store two different digital-to-analog converter (DAC) codes, which correspond to two different reference currents that approximate two different output currents generated on a bitline during consecutive single-ended current sensing processes directed to the same selected memory cell but using different input voltages. Optionally, the read circuit can also include a current-voltage (I-V) slope calculator, which uses the two different DAC codes to calculate an I-V slope characteristic of the selected memory cell, and a bit generator, which performs a comparison of the I-V slope characteristic and a reference I-V slope characteristic and based on results of the comparison, generates and outputs a bit with a logic value that represents the data storage state of the selected memory cell. Also disclosed is an associated method.

Claims20

Dependent claims

A memory structure comprising:

an array of memory cells;
and
a read circuit comprising:
a current sense amplifier comprising:
a data input node;
a reference input node;
and an output node;
a column decoder connected between the array and the data input node;
a digital-to-analog converter connected to the reference input node;
and
multiple registers connected to the output node, wherein the registers are controlled by different clock signals.

8 more elements

A method comprising:

providing a memory structure comprising:
an array of memory cells and a read circuit connected to the array;
detecting, by the read circuit, a data storage state of any memory cell in the array based on a digital current-to-voltage slope value for the memory cell;
and
outputting, by the read circuit, a bit representative of the data storage state.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application

17/317,938Filed 12 May 2021

Granted

5 Jul 2022

Term ends

Not estimatedThe source records don’t support an estimate.

Classification11 codes

G11C 7/067
Sense amplifiers; Associated circuits , e.g. timing or triggering circuits: single-ended amplifiers
G11C 11/4091
Read-write [R-W] circuits: sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or…
G11C 7/1069
Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits: i/O lines read…
G11C 7/16
Arrangements for writing information into, or reading information out from, a digital store: storage of analogue signals in digital stores using…

Memory with read circuit for current-to-voltage slope characteristic-based sensing and method

Life of this patent

Memory with read circuit for current-to-voltage slope characteristic-based sensing and method

Life of this patent

Abstract

Claims20