Immersion lithography system and method of using
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYung-Yao Lee, Wei Chih Lin, Chih Chien Lin
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Abstract
An immersion lithography system includes an immersion hood, wherein the immersion hood includes a lens system. The immersion lithography system further includes a wafer stage, wherein the wafer stage is moveable relative to the immersion hood, and the wafer stage includes an area for receiving a wafer. The immersion lithography system further includes a first particle capture area on the wafer stage outside of the area for receiving the wafer, wherein the first particle capture area includes silicon, silicon nitride oxide or a photoresist material.
Claims20
An immersion lithography system comprising:
- an immersion hood, wherein the immersion hood comprises a lens system;
- a wafer stage, wherein the wafer stage is moveable relative to the immersion hood, and the wafer stage comprises an area for receiving a wafer;
- and
- a first particle capture area on the wafer stage outside of the area for receiving the wafer in a direction parallel to a top surface of the wafer stage, wherein the first particle capture area comprises silicon, silicon nitride oxide or a photoresist material, and the first particle capture area fails to surround the wafer stage.
A method of using an immersion lithography system, the method comprising:
- calibrating an immersion hood by moving a wafer stage in a plane parallel to a top surface of the wafer stage;
- moving the wafer stage to position the immersion hood over a particle capture area on the wafer stage;
- moving the wafer stage to define a two-dimensional routing track over the particle capture area;
- and
- moving the wafer stage to position the immersion hood over a wafer on the wafer stage after defining the two-dimensional routing track over the particle capture area.
An immersion lithography system comprising:
- an immersion hood, wherein the immersion hood comprises a lens system;
- a wafer stage, wherein the wafer stage is moveable relative to the immersion hood, and the wafer stage comprises an area for receiving a wafer;
- and
- a plurality of particle capture areas on the wafer stage, wherein each of the plurality of particle capture areas are separate from the area for receiving the wafer in a direction parallel to a top surface of the wafer stage, each of the plurality of particle capture areas independently comprises silicon, silicon nitride oxide or a photoresist material, and a first particle capture area of the plurality of particle capture areas is discontinuous with all other particle capture areas of the plurality of particle capture areas.
Dependencies are inferred from the claim text.