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US 11,378,827 B2Granted
Photonic devices and methods of fabrication thereof
AssigneeSTMicroelectronics (Crolles 2) SAS
InventorsStephane Monfray, Frédéric Boeuf
Life of this patent
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Abstract
A photonic device includes a first region having a first doping type, and a second region having a second doping type, where the first region and the second region contact to form a vertical PN junction. The first region includes a silicon germanium (SiGe) region having a gradual germanium concentration.
Claims18
A method of manufacturing a photonic device, the method comprising:
- forming a first region having a first doping type over a substrate, the first region comprising a SiGe region with a varying germanium content that varies within the SiGe region so that a first germanium concentration at a first position within the SiGe region proximate an upper surface of the SiGe region is different from a second germanium concentration at a second position within the SiGe region further from the upper surface than the first position;
- and
- forming a second region having a second doping type over the substrate, the first region and the second region contacting to form a vertical PN junction.
A method of manufacturing a photonic device, the method comprising:
- depositing a mask layer over a substrate;
- forming an opening in the mask layer to expose a surface of the substrate;
- epitaxially growing a silicon germanium block on the exposed surface through the opening;
- diffusing the silicon germanium block to form a silicon germanium region comprising a varying germanium concentration in the substrate;
- forming a first trench in a first region of the substrate, the first trench being disposed against a sidewall of the silicon germanium region;
- forming a second trench in a second region of the substrate, the second region contacting the silicon germanium region;
- doping the first region and the silicon germanium region with a doping of a first doping type;
- and
- doping the second region with a doping of a second doping type.
6 more elements
A method of manufacturing a photonic device, the method comprising:
- locally forming a silicon germanium block on a exposed surface of a substrate;
- annealing the silicon germanium block to form a silicon germanium region comprising a varying germanium concentration in the substrate;
- forming a ridge separated by a first trench in a first region of the substrate and a second trench in a second region of the substrate, the ridge including the silicon germanium region, the first trench being formed against a sidewall of the silicon germanium region, the second region contacting the first region;
- doping the first region and the silicon germanium region with a doping of a first doping type;
- and
- doping the second region with a doping of a second doping type.
3 more elements
Dependencies are inferred from the claim text.