Back to results
US 11,378,747 B2Granted
Waveguide attenuator
AssigneeGlobalFoundries U.S. Inc.
InventorsYusheng Bian, Won Suk Lee, Abdelsalam A. Aboketaf
Life of this patent
Estimating the term…
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to waveguide attenuators and methods of manufacture. The structure includes: a main bus waveguide structure; a first hybrid waveguide structure evanescently coupled to the main bus waveguide structure and comprising a first geometry of material; and a second hybrid waveguide structure evanescently coupled to the main bus waveguide structure and comprising a second geometry of the material.
Claims18
A structure comprising:
- a main bus waveguide structure;
- a first hybrid waveguide structure evanescently coupled to the main bus waveguide structure and comprising a first geometry of material;
- and
- a second hybrid waveguide structure evanescently coupled to the main bus waveguide structure and comprising a second geometry of the material, wherein:
- the first geometry of material is different than the second geometry of material and the main bus waveguide structure is devoid of the material;
- the first geometry of material is structured to attenuate a transverse-electric (TE) mode of transmission;
- and
- the second geometry of the material is structured to attenuate a transverse-magnetic (TM) mode of transmission.
5 more elements
A structure comprising:
- a first waveguide structure composed of semiconductor material;
- a second waveguide structure composed of the semiconductor material and which is partially coated with a polarization-independent transparent conductive material;
- and
- a third waveguide structure composed of the semiconductor material and which is partially coated with the polarization-independent transparent conductive material, differently than the second waveguide structure,
- wherein the polarization-independent transparent conductive material has a geometry that attenuates a transverse-electric (TE) mode of transmission for the second waveguide structure and attenuates a transverse-magnetic (TM) mode of transmission for the third waveguide structure.
2 more elements
A structure, comprising:
- a main bus waveguide structure comprising semiconductor material monolithically integrated into semiconductor on insulator (SOI) technology;
- a first hybrid waveguide structure comprising the semiconductor material monolithically integrated into the SOI technology, the first hybrid waveguide structure further comprising a partial coating of vanadate based material which has a first geometry which is structured to prevent reflection back to the main bus waveguide structure;
- and
- a second hybrid waveguide structure comprising the semiconductor material monolithically integrated into the SOI technology, the second hybrid waveguide structure further comprising a partial coating of vanadate based material which has a geometry different than the first geometry and which is structured to prevent reflection back to the main bus waveguide structure.
1 more element
Dependencies are inferred from the claim text.