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US 11,378,701 B2Granted
Low dark current radiation detector and method of making the same
AssigneeRedlen Technologies, Inc.
InventorsSaeid Taherion, Michael K. Jackson
Life of this patent
Estimating the term…
Abstract
A radiation sensor includes a radiation-sensitive semiconductor layer, a cathode electrode disposed over a front side of the radiation-sensitive semiconductor layer that is configured to be exposed to radiation, at least one anode electrode disposed over a backside of the radiation-sensitive semiconductor layer, and a potential barrier layer located between the cathode electrode and the front side of the radiation-sensitive semiconductor layer.
Claims14
A radiation sensor, comprising:
- a radiation-sensitive semiconductor layer;
- a cathode electrode disposed over a front side of the radiation-sensitive semiconductor layer that is configured to be exposed to radiation;
- at least one anode electrode disposed over a backside of the radiation-sensitive semiconductor layer;
- and
- a potential-barrier layer located between the cathode electrode and the front side of the radiation-sensitive semiconductor layer,
- wherein the radiation sensor has a dark current having a temperature dependence in which a rate of increase in the dark current per degree Kelvin is in a range from 0.1% per Kelvin to 1.2% per degree Kelvin in a temperature range from 300 K to 335 K.
3 more elements
A method of operating a radiation detector which comprises:
- a radiation sensor comprising a radiation-sensitive semiconductor layer which comprises n-type cadmium zinc telluride, a cathode electrode disposed over a front side of the radiation-sensitive semiconductor layer that is configured to be exposed to radiation, at least one anode electrode disposed over a backside of the radiation-sensitive semiconductor layer, and a potential-barrier layer located between the cathode electrode and the front side of the radiation-sensitive semiconductor layer;
- and
- a signal processing unit including at least one pixel detector circuit that is electrically connected to the at least one anode electrode,
- the method comprising:
- applying a negative voltage to the cathode electrode relative to the at least one anode electrode;
- and
- detecting current from the radiation sensor by the signal processing unit, wherein dark current increases by less than 50% during operation in a temperature range between 300 degrees Kelvin and 335 degrees Kelvin.
4 more elements
Dependencies are inferred from the claim text.