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AssigneeChangxin Memory Technologies, Inc.
InventorShih-Chieh Lin
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The present disclosure provides a measurement method for a contact resistance of a transistor test device and a computer-readable medium. The measurement method includes: providing multiple transistor test devices, where the transistor test devices each include a source, a drain, an active layer, a gate located at the active layer, and wires connected to the source and the drain, widths of gates, channel region lengths of active layers, and quantities of connected wires of the transistor test devices are the same, and widths of the active layers of the transistor test devices are different; obtaining multiple total resistances of the transistor test devices by measuring the transistor test devices; and determining contact resistances of the transistor test devices based on the multiple total resistances and the widths of the active layers matching the total resistances.
A measurement method for contact resistances of transistor test devices, wherein each of the transistor test devices comprises a source, a drain, an active layer, a gate located at the active layer, and wires connected to the source and the drain;
Dependencies are inferred from the claim text.