Epitaxial deposition reactor with reflector external to the reaction chamber and cooling method of a susceptor and substrates

An apparatus, comprising:

• a reactor for epitaxial deposition of semiconductor material on substrates including:
• a reaction chamber provided with a cavity defined by a lower wall, an upper wall and lateral walls,
• a susceptor positioned inside said cavity and adapted to support and heat substrates during epitaxial deposition,
• a heater adapted to heat said susceptor,
• an upper plate positioned above said upper wall and overlying said susceptor so that it reflects thermal radiation emitted by said susceptor towards said susceptor;
• wherein a liquid flow is provided in or on said upper plate to cool said upper plate;
• wherein a gaseous flow is provided between said upper wall and said upper plate to promote the transfer of heat from said upper wall to said upper plate;
• wherein said upper plate comprises a first plate and a second plate, the second plate being configured to remain fixed, the first plate being configured to rotate and translate relative to the second plate and take at least a first position and a second position both overlying the susceptor,
• wherein reflection of said first plate towards said susceptor in said first position is different from reflection of said first plate towards said susceptor in said second position.

An apparatus, comprising:

• a reactor for epitaxial deposition of semiconductor material on substrates including:
• a reaction chamber provided with a cavity defined by a lower wall, an upper wall and lateral walls,
• a susceptor positioned inside said cavity and adapted to support and heat substrates during epitaxial deposition,
• a heater adapted to heat said susceptor,
• an upper plate positioned above said upper wall and overlying said susceptor, said a first part of the upper plate rotating relative to a fixed second part to differently reflect thermal radiation emitted by said susceptor towards said susceptor;
• wherein a liquid flow is provided to cool said upper plate;
• wherein a gaseous flow is provided between said upper wall and said upper plate to promote the transfer of heat from said upper wall to said upper plate.