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US 11,377,749 B1Granted
Electrodeposition of high damping magnetic alloys
AssigneeSeagate Technology LLC
InventorsJie Gong, Steven C. Riemer, John A. Rice, Hilton Erskine, Michael C. Kautzky, Xuelian Xu
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Abstract
A method includes immersing a wafer in an electrolyte including a plurality of compounds having elements of a high damping magnetic alloy with very low impurity and small uniform grain size. The method also includes applying a pulsed current with a certain range of duty cycle and pulse length to the wafer when the wafer is immersed in an electrolyte. The wafer is removed from the electrolyte when a layer of the high damping magnetic alloy is formed on the wafer.
Claims16
A method comprising:
- immersing a wafer in an electrolyte including a plurality of compounds having elements of a high damping magnetic alloy;
- applying a pulsed current to the wafer when the wafer is immersed in electrolyte;
- and
- removing the wafer from the electrolyte when a layer of the high damping magnetic alloy having a mixed face-centered cubic (fcc) and body-centered cubic (bcc) crystal structure is formed on the wafer,
- wherein the mixed fcc and bcc crystal structure comprises fcc and bcc grains, and wherein the bcc grains formed by electrodeposition are larger than the fcc grains formed by electrodeposition, and
- wherein the high damping magnetic alloy comprises a 5d transition element, and wherein an atomic percentage of the 5d transition element relative to atomic percentages of other elements in the high damping magnetic alloy influences the formation of the mixed fcc and bcc structure.
3 more elements
A method comprising:
- immersing a wafer in an electrolyte including a plurality of compounds having elements of a high damping magnetic alloy with a damping constant greater than 0.005 and less than or equal to 0.07;
- applying a pulsed current to the wafer when the wafer is immersed in electrolyte;
- and
- removing the wafer from the electrolyte when a layer of the high damping magnetic alloy having a mixed face-centered cubic (fcc) and body-centered cubic (bcc) crystal structure is formed on the wafer,
- wherein the mixed fcc and bcc crystal structure comprises fcc and bcc grains, and wherein the bcc grains formed by electrodeposition are larger than the fcc grains formed by electrodeposition, and
- wherein the high damping magnetic alloy comprises a 5d transition element, and wherein an atomic percentage of the 5d transition element relative to atomic percentages of other elements in the high damping magnetic alloy influences the formation of the mixed fcc and bcc structure.
3 more elements
Dependencies are inferred from the claim text.