Manifolds for uniform vapor deposition
AssigneeASM IP Holding B.V.
InventorDavid Marquardt
Life of this patent
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Abstract
A semiconductor device comprising a manifold for uniform vapor deposition is disclosed. The semiconductor device can include a manifold comprising a bore and having an inner wall. The inner wall can at least partially define the bore. A first axial portion of the bore can extend along a longitudinal axis of the manifold. A supply channel can provide fluid communication between a gas source and the bore. The supply channel can comprise a slit defining an at least partially annular gap through the inner wall of the manifold to deliver a gas from the gas source to the bore. The at least partially annular gap can be revolved about the longitudinal axis.
Claims8
A semiconductor processing device comprising:
- a manifold comprising a bore therein, the bore defining a gas passageway between a first end portion of the manifold and a second end portion of the manifold, the first end portion disposed opposite to and spaced from the second end portion along a longitudinal axis of the manifold by a first distance,
- wherein the gas passageway extends through the manifold for a second distance larger than the first distance, the gas passageway comprising:
- a first portion extending from the first end portion of the manifold;
- a non-bifurcated second portion, fluidly connected to and downstream from the first portion, comprising:
- a first curved segment;
- a linear segment fluidly connected to and downstream from the first curved segment;
- and
- a second curved segment fluidly connected to and downstream from the linear segment;
- and
- a third portion fluidly connected to and downstream from the non-bifurcated second portion, the third portion extending to the second end portion of the manifold;
- and
- a reaction chamber disposed downstream of and in fluid communication with the bore.
Dependencies are inferred from the claim text.