Apparatus for depositing chalcogenide thin films
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorRemy Gassilloud
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Abstract
A device for depositing at least one radical chalcogenide thin film on an element to be treated including an intake area and a diffusion area receiving the element to be treated, the intake area and the diffusion area extending along a longitudinal axis, a radical hydrogen source connected to the intake area, pumping means, means for injecting a reagent reacting with the radical hydrogen to form H2S, and means for supplying a precursor to the diffusion area. The injection means inject the reagent into a central area of the intake area in the longitudinal direction within the radical hydrogen flow. The pumping means are controlled so as to operate during the reagent injection, and generate a flow of H2S along the element to be treated in order to activate said element so as to absorb the precursor.
Claims20
A device for depositing at least chalcogenide thin film on at least one side of an element to be treated comprising:
- an inlet zone,
- a diffusion zone connected to the inlet zone, the diffusion zone being configured to receive the element to be treated, the inlet zone and the diffusion zone extending along a longitudinal axis,
- a hydrogen radical source connected to the inlet zone and oriented so that the streamlines of the hydrogen radical flow in the hydrogen radical source are substantially parallel to the longitudinal axis (Z),
- a pump configured to pump in the diffusion zone,
- at least a first injector for injecting a reactant capable of reacting with hydrogen radical to form H2S, and
- at least a second injector for injecting at least one precursor,
- wherein the at least first injector is configured to inject the reactant into a central zone of the inlet zone in the direction of the longitudinal axis toward the diffusion zone in such a way that the reactant is injected into the hydrogen radical flow, wherein the hydrogen radicals intersecting with the reactant occurs firstly in the inlet zone, not in the diffusion zone, and
- wherein the pump is controlled to operate at least during the injection of reactant and are oriented so as to generate a flow of the H2S produced along at least one side of the element to be treated parallel thereto in order to activate said side for the absorption of the precursor.
Dependencies are inferred from the claim text.