Cleaning composition for post-etch or post ash residue removal from a semiconductor substrate and corresponding manufacturing process

A cleaning composition, comprising:

• (A) one or more etchants comprising fluoride;
• (B) one or more alkanolamines selected from the group consisting of monoisopropanolamine, diisopropanolamine, triisopropanolamine, 2-(2-aminoethylamino)-ethanol, 2-(2-aminoethoxy)-ethanol, 2-aminoethanol, 2-(N-methylamino) ethanol, 2-amino-1-propanol, 2-(2-hydroxyethylamino)ethanol, 2-[(2-aminoethyl)(2-hydroxyethyl)-amino]-ethanol, tris-(2-hydroxyethyl)-amine, N-aminoethyl-N′-hydroxyethylethylenediamine, N,N′-dihydroxyethyl-ethylenediamine, 2-[2-(2-aminoethoxy)-ethylamino]ethanol, 2-[2-(2-aminoethylamino)-ethoxy]-ethanol, 2-[2-(2-aminoethoxy)-ethoxy]-ethanol, tertiary-butyldiethanolamine, 3-amino-1-propanol, isobutanolamine, 2-(2-aminoethoxy)-propanol and mixtures thereof;
• (C) one or more sulfonic acids selected from the group consisting of methane sulfonic acid, ethanesulfonic acid, propanesulfonic acid, butanesulfonic acid, hexanesulfonic acid, 3-(N-morpholino)propane sulfonic acid, 2-(N-morpholino)ethanesulfonic acid, N-cyclohexyl-2-aminoethanesulfonic acid, 3-[4-(2-hydroxyethyl)-1-piperazinyl]propanesulfonic acid, N-cyclohexyl-3-aminopropanesulfonic acid and mixtures thereof;
• (D) one or more corrosion inhibitors selected from the group consisting of benzotriazole, 5-methyl-benzotriazole, 1,2,4-triazole, 5-aminotetrazole, 1-hydroxybenzotriazole, 5-amino-1,3,4-thiadiazol-2-thiol, 3-amino-1H-1,2,4 triazole, 3,5-diamino-1,2,4-triazole, tolyltriazole, 5-phenyl-benzotriazole, 5-nitro-benzotriazole, 3-amino-5-mercapto-1,2,4-triazole, 1-amino-1,2,4-triazole, 2-(5-amino-pentyl)-benzotriazole, 1-amino-1,2,3-triazole, 1-amino-5-methyl-1,2,3-triazole, 3-mercapto-1,2,4-triazole, 3-isopropyl-1,2,4-triazole, 5-phenylthiol-benzotriazole, halobenzotriazoles where halo is selected from the group consisting of fluorine, chlorine, bromine and iodine, naphthotriazole, 1 H-tetrazole-5-acetic acid, 2-mercaptobenzothiazole, 1-phenyl-2-tetrazoline-5-thione, 2-mercaptobenzimidazole, 4-methyl-2-phenylimidazole, 2-mercaptothiazoline, 2,4-diamino-6-methyl-1,3,5-triazine, thiazole, imidazole, benzimidazole, triazine, methyltetrazole, 1,3-dimethyl-2-imidazolidinone, 1,5-pentamethylenetetrazole, 1-phenyl-5-mercaptotetrazole, 2H-imidazole-2-thione, 4-methyl-4H-1,2,4-triazole-3-thiol, 5-amino-1,3,4-thiadiazole-2-thiol, benzothiazole, tritolyl phosphate, indazole, adenine, cytosine, guanine, thymine, 2,2′-azanediyldiacetic acid, propanethiol, ascorbic acid, thiourea, ethylene urea, ethylene thiourea, 1,1,3,3-tetramethylurea, urea, uric acid, glycine, dodecylphosphonic acid, oxalic acid, malonic acid, succinic acid, nitrilotriacetic acid and mixtures thereof,
• wherein at least one corrosion inhibitor (D) is glycine, in a total amount of from 0.01 to 1 wt.-%, based on the total weight of the cleaning composition;
• (E) citric acid in a total amount in the range of from 5 to 25 wt.-%, based on the total weight of the cleaning composition;
• and
• (F) water.