Method of manufacturing a silicon carbide device and wafer composite including laser modified zones in a handle substrate
AssigneeInfineon Technologies AG
InventorsRoland Rupp, Mihai Draghici, Tobias Franz Wolfgang Hoechbauer, Wolfgang Lehnert, Matteo Piccin
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Abstract
A wafer composite includes a handle substrate, an auxiliary layer formed on a first main surface of the handle substrate, and a silicon carbide structure formed over the auxiliary layer. The handle substrate is subjected to laser radiation that modifies crystalline material along a focal plane in the handle substrate. The focal plane is parallel to the first main surface. The auxiliary layer is configured to stop propagation of microcracks that the laser radiation may generate in the handle substrate.
Claims12
A method of manufacturing a silicon carbide device, the method comprising:
- providing a wafer composite comprising a handle substrate, an auxiliary layer formed on a first main surface of the handle substrate, and a silicon carbide structure formed over the auxiliary layer;
- and
- subjecting the handle substrate to laser radiation that modifies crystalline material along a focal plane in the handle substrate, the focal plane being parallel to the first main surface,
- wherein the auxiliary layer is configured to stop propagation of microcracks from being generated in the handle substrate by the laser radiation.
Dependencies are inferred from the claim text.