Method of manufacturing electron source
Assignee38th Research Institute, China Electronics Technology Group Corporation
InventorsXuehui Wang, Junting Wang, Xianbin Hu, Dizhi Chen, Guang Tang, Huarong Liu, Lei Zheng, Qing Qian, Chunning Zheng, Guochao Wang
Life of this patent
Estimating the term…
Abstract
The present disclosure provides a method of manufacturing an electron source. The method includes forming one or more fixed emission sites on at least one needle tip, the fixed emission sites including a reaction product formed by metal atoms on a surface of the needle tip and gas molecules.
Claims17
A method of manufacturing a field emission electron source, the method comprising:
- forming one or more fixed emission sites on at least one needle tip, the one or more fixed emission sites including a reaction product formed by metal atoms on a surface of the at least one needle tip and gas molecules, and the one or more fixed emission sites are rooted in the surface of the at least one needle tip, wherein the reaction is carried out without an ion bombardment,
- wherein the gas molecules include hydrogen-containing gas molecules and one or more of the following:
- nitrogen-containing gas molecules, carbon-containing gas molecules or oxygen-containing gas molecules,
- wherein an electric field is obtained by applying a bias voltage, and
- wherein the applying a bias voltage comprises one or more of the following:
- applying a positive bias voltage, applying a negative bias voltage, or a combination of applying a positive bias voltage and applying a negative bias voltage,
- wherein in a case where a negative bias voltage is applied for forming the fixed emission site, the negative bias voltage is applied to the needle tip to generate an emission current having a current value in an order of microamperes,
- wherein the negative bias voltage is maintained for a preset duration or is adjusted until an emission current of a predetermined value is generated, and
- wherein the negative bias voltage is adjusted such that the field emission electron source emits a current of an order of less than 1 mA, so as to avoid the needle tip from being changed in terms of a morphology or burnt-out,
- and/or
- wherein in a case where a positive bias voltage is applied to the needle tip for forming the fixed emission sites, the positive bias voltage is applied to the needle tip for a preset duration,
- wherein the positive bias voltage has a value less than a value of a bias voltage for field evaporation for forming a protrusion.
A method of manufacturing a field emission electron source, the method comprising:
- forming one or more fixed emission sites on at least one needle tip, the one or more fixed emission sites including a reaction product formed by metal atoms on a surface of the at least one needle tip and gas molecules,
- wherein the one or more fixed emission sites are formed by reaction of the metal atoms with the gas molecules under an electric field,
- wherein the gas molecules include hydrogen-containing gas molecules and one or more of the following:
- nitrogen-containing gas molecules, carbon-containing gas molecules or oxygen-containing gas molecules,
- wherein the hydrogen-containing gas molecules comprise hydrogen molecules,
- wherein the metal atoms comprise tungsten atoms, and
- wherein the fixed emission sites comprise a hydrogen tungsten compound.
A method of manufacturing a field emission electron source, the method comprising:
- forming one or more fixed emission sites on at least one needle tip, the one or more fixed emission sites including a reaction product formed by metal atoms on a surface of the at least one needle tip and gas molecules,
- after forming the one or more fixed emission sites on the at least one needle tip, applying an electric field so that the gas molecules are adsorbed on the fixed emission sites to remove at least one emission site,
- wherein the gas molecules include hydrogen-containing gas molecules.
Dependencies are inferred from the claim text.