Method for preparing ER- or ER/O-doped silicon-based luminescent material emitting communication band at room temperature, the luminescent material and ER- or ER/O-SI lasers

A method for preparing an erbium (Er)- or erbium oxygen (Er/O)-doped silicon-based luminescent material emitting a communication band at room temperature, comprising the following steps:

• (a) doping a single crystalline silicon wafer with erbium ion implantation or co-doping the single crystalline silicon wafer with erbium ion and oxygen ion implantation simultaneously to obtain an Er- or Er/O-doped silicon wafer, wherein the single crystalline silicon wafer is a silicon wafer with a germanium epitaxial layer, or an SOI silicon wafer with silicon on an insulating layer or other silicon-based wafer;
• and
• (b) subjecting the Er- or Er/O-doped silicon wafer to a deep-cooling annealing treatment,
• wherein the deep-cooling annealing treatment includes a temperature increasing process and an ultra-rapid cooling process that includes a cooling rate of greater than −200° C. s−1.