Back to results
US 11,361,928 B2Granted
Piezoelectric vacuum transistor
AssigneeInternational Business Machines Corporation
InventorsQing Cao, Kangguo Cheng, Zhengwen Li, Fei Liu
Life of this patent
Estimating the term…
Abstract
A vacuum transistor includes a substrate and a first terminal formed on the substrate. A piezoelectric element has a second terminal formed on the piezoelectric element, wherein the piezoelectric element is provided over the first terminal to provide a gap between the first terminal and the second terminal. The gap is adjusted in accordance with an electrical field on the piezoelectric element.
Claims20
A vacuum transistor, comprising:
- a substrate with a chamber in the substrate;
- a first doped region in the substrate below the chamber;
- a first terminal formed on the first doped region;
- a piezoelectric material on the substrate and above the chamber, wherein the piezoelectric material includes a second doped region;
- and
- a second terminal on the second doped region, wherein the second terminal is aligned with the first terminal, and wherein there is a gap with a distance between the first terminal and the second terminal.
3 more elements
A vacuum transistor, comprising:
- a substrate with a trench in the substrate;
- a first wire in the substrate below the trench;
- a first terminal formed in electrical contact with the first wire;
- a piezoelectric material on the substrate and above the trench, wherein the piezoelectric material includes a second wire, and wherein the piezoelectric material forms a vacuum seal with the substrate to maintain a vacuum region in the trench;
- and
- a second terminal in electrical contact with the second wire, wherein the second terminal is aligned with the first terminal, and wherein there is a gap with a distance between the first terminal and the second terminal.
3 more elements
A vacuum transistor, comprising:
- a substrate with a chamber in the substrate;
- a first doped region in the substrate below the chamber;
- a first terminal formed on the first doped region;
- a piezoelectric material on the substrate and above the chamber, wherein the piezoelectric material includes a second doped region, and wherein the piezoelectric material forms a vacuum seal with the substrate to maintain a vacuum region in the chamber;
- a second terminal on the second doped region, wherein the second terminal is aligned with the first terminal, and wherein there is a gap with a distance between the first terminal and the second terminal;
- and
- a first electrode and a second electrode on a side of the piezoelectric material opposite from the second terminal, wherein the first electrode and the second electrode each include interdigitated portions on the piezoelectric material.
4 more elements
Dependencies are inferred from the claim text.