Semiconductor device and method of manufacturing thereof

A semiconductor device comprising:

• a handle substrate;
• a first semiconductor substrate provided on the handle substrate, the first semiconductor substrate having a first-type portion and a second-type portion that are stacked and interface with each other to form a first substrate p-n junction;
• and
• a second semiconductor substrate provided on the handle substrate, the second semiconductor substrate having another first-type portion and another second-type portion that are stacked and interface with each other to form a second substrate p-n junction,
• wherein the first-type portions of the first semiconductor substrate and second semiconductor substrate each correspond to one of a p-type portion and a n-type portion, and the second-type portions of the first semiconductor substrate and second semiconductor substrate each correspond to the other of the p-type portion and n-type portion,
• wherein the first semiconductor substrate and the second semiconductor substrate are spaced apart by a trench, and
• wherein the trench is filled with a conductive material.

A semiconductor device comprising:

• a handle substrate;
• a first semiconductor substrate provided on the handle substrate, the first semiconductor substrate having a first-type portion and a second-type portion that are stacked and interface with each other to form a first substrate p-n junction;
• and
• a second semiconductor substrate provided on the handle substrate, the second semiconductor substrate having another first-type portion and another second-type portion that are stacked and interface with each other to form a second substrate p-n junction,
• wherein the first-type portions of the first semiconductor substrate and second semiconductor substrate each correspond to one of a p-type portion and a n-type portion, and the second-type portions of the first semiconductor substrate and second semiconductor substrate each correspond to the other of the p-type portion and n-type portion,
• wherein the first semiconductor substrate and the second semiconductor substrate are spaced apart by a trench, and
• wherein the second-type portions of the first semiconductor substrate and second semiconductor substrate each has a thickness that is equal to or less than its maximum depletion width.

A gyroscope comprising:

• a semiconductor device, the semiconductor device comprising:
• a handle substrate,
• a first semiconductor substrate provided on the handle substrate, the first semiconductor substrate having a first-type portion and a second-type portion that are stacked and interface with each other to form a first substrate p-n junction, and
• a second semiconductor substrate provided on the handle substrate, the second semiconductor substrate having another first-type portion and another second-type portion that are stacked and interface with each other to form a second substrate p-n junction,
• wherein the first-type portions of the first semiconductor substrate and second semiconductor substrate each correspond to one of a p-type portion and a n-type portion, and the second-type portions of the first semiconductor substrate and second semiconductor substrate each correspond to the other of the p-type portion and n-type portion, and
• wherein the first semiconductor substrate and the second semiconductor substrate are spaced apart by a trench,
• wherein the first semiconductor substrate forms a resonator of the gyroscope and the second semiconductor substrate forms an electrode of the gyroscope.