Method for making semiconductor device including vertically integrated optical and electronic devices and comprising a superlattice
AssigneeAtomera Incorporated
InventorRobert John Stephenson
Life of this patent
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Abstract
A method for making a semiconductor device may include forming a plurality of waveguides on a substrate, and forming a superlattice overlying the substrate and waveguides. The superlattice may include a plurality of stacked groups of layers, with each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The method may further include forming an active device layer on the superlattice comprising at least one active semiconductor device.
Claims23
A method for making a semiconductor device comprising:
- forming a plurality of waveguides on a substrate;
- forming a superlattice overlying the substrate and waveguides, the superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions;
- and
- forming an active device layer on the superlattice comprising at least one active semiconductor device.
A method for making a semiconductor device comprising:
- forming a plurality of waveguides on a semiconductor-on-insulator (SOI) substrate;
- forming a superlattice overlying the SOI substrate and waveguides, the superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions;
- forming a plurality of optical modulator regions within the superlattice;
- and
- forming an active device layer on the superlattice comprising at least one active semiconductor device.
A method for making a semiconductor device comprising:
- forming a plurality of waveguides on a substrate;
- forming a superlattice overlying the substrate and waveguides, the superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base silicon monolayers defining a base silicon portion, and at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions;
- and
- forming an active device layer on the superlattice comprising at least one active semiconductor device.
Dependencies are inferred from the claim text.