Laser irradiation apparatus, laser irradiation method, and method of manufacturing semiconductor device

A laser irradiation apparatus comprising:

• a laser generating device configured to generate a laser beam;
• a flotation unit configured to cause a workpiece to float, the workpiece being to be irradiated with the laser beam;
• and
• a conveying unit configured to convey the floating workpiece, wherein
• the flotation unit includes first to fourth regions over which the workpiece is conveyed,
• the conveying unit includes
• a first conveying unit configured to convey the workpiece from the first region to the second region,
• a second conveying unit configured to convey the workpiece from the second region to the third region,
• a third conveying unit configured to convey the workpiece from the third region to the fourth region, and
• a fourth conveying unit configured to convey the workpiece from the fourth region to the first region,
• the workpiece is irradiated with the laser beam while the workpiece is being conveyed from the first region to the second region,
• the first conveying unit conveys the workpiece with the first conveying unit holding the workpiece at a position where the first conveying unit does not overlap an irradiation position of the laser beam as viewed in a plan view,
• the flotation unit is rectangular in shape as viewed in a plan view,
• the first conveying unit moves along a first side of the flotation unit to convey the workpiece from the first region to the second region,
• the second conveying unit moves along a second side of the flotation unit to convey the workpiece from the second region to the third region,
• the third conveying unit moves along a third side of the flotation unit to convey the workpiece from the third region to the fourth region,
• the fourth conveying unit moves along a fourth side of the flotation unit to convey the workpiece from the fourth region to the first region,
• the laser beam is applied onto a portion of the workpiece while the workpiece is being conveyed from the first region to the second region,
• a rotating mechanism is provided in any one of the first to fourth regions of the flotation unit, the rotating mechanism being configured to rotate the workpiece by 180 degrees with the rotating mechanism holding a horizontal surface of the workpiece,
• the laser irradiation apparatus is configured to
• convey the workpiece from the first region to the second region with the use of the first conveying unit and irradiate the workpiece with the laser beam,
• rotate the workpiece by 180 degrees with the use of the rotating mechanism while conveying the workpiece with the use of the second to fourth conveying units, and
• convey the workpiece from the first region to the second region with the use of the first conveying unit and irradiate the workpiece with the laser beam.

A laser irradiation apparatus comprising:

• a laser generating device configured to generate a laser beam;
• a flotation unit configured to cause a workpiece to float, the workpiece being to be irradiated with the laser beam;
• and
• a conveying unit configured to convey the workpiece, wherein
• the workpiece has a quadrangular planar shape with four sides,
• the conveying unit includes a holding mechanism configured to hold the workpiece,
• the holding mechanism holds only one of the four sides of the workpiece,
• the holding mechanism is located at a position where the holding mechanism is not irradiated with the laser beam while the workpiece is being conveyed, and
• the holding mechanism holds the workpiece by sucking a surface of the workpiece that is opposite to a surface to be irradiated with the laser beam.

A laser irradiation method of conveying a workpiece with first to fourth conveying units while causing the workpiece to float with the use of a flotation unit and irradiating the workpiece with a laser beam, wherein

• the workpiece is conveyed from a first region to a second region with the use of the first conveying unit,
• the workpiece is conveyed from the second region to a third region with the use of the second conveying unit,
• the workpiece is conveyed from the third region to a fourth region with the use of the third conveying unit,
• the workpiece is conveyed from the fourth region to the first region with the use of the fourth conveying unit,
• the workpiece is irradiated with the laser beam while the workpiece is being conveyed from the first region to the second region,
• the first conveying unit conveys the workpiece with the first conveying unit holding the workpiece at a position where the first conveying unit does not overlap an irradiation position of the laser beam as viewed in a plan view, and
• a holding mechanism included in the first conveying unit holds the workpiece by sucking a surface of the workpiece that is opposite to a surface to be irradiated with the laser beam.

A laser irradiation method of conveying a workpiece with a conveying unit while causing the workpiece to float with the use of a flotation unit and irradiating the workpiece with a laser beam, wherein

• the workpiece has a quadrangular planar shape with four sides,
• the conveying unit includes a holding mechanism configured to hold the workpiece,
• the holding mechanism holds only one of the four sides of the workpiece and holds the workpiece at a position where the workpiece is not irradiated with the laser beam while the workpiece is being conveyed, and
• a holding mechanism holds the workpiece by sucking a surface of the workpiece that is opposite to a surface to be irradiated with the laser beam.

A method of manufacturing a semiconductor device, the method comprising steps of:

• (a) forming an amorphous film on a substrate;
• and
• (b) irradiating the amorphous film with a laser beam to crystalize the amorphous film, wherein
• the step of (b) is a step of conveying the substrate with the a conveying unit while causing the substrate to float with the use of a flotation unit and irradiating the amorphous film with the laser beam,
• the conveying unit conveys the substrate with the conveying unit holding the substrate at a position where the conveying unit does not overlap an irradiation position of the laser beam as viewed in a plan view,
• after the substrate is conveyed with the use of the conveying unit and the substrate is irradiated with the laser beam, the substrate is rotated with the use of a rotating mechanism provided on the flotation unit with the rotating mechanism holding a horizontal surface of the substrate, and the substrate is conveyed again to be irradiated with the laser beam, and
• a holding mechanism included in the conveying unit holds the workpiece by sucking a surface of the workpiece that is opposite to a surface to be irradiated with the laser beam.

A method of manufacturing a semiconductor device, the method comprising steps of:

• (a) forming an amorphous film on a substrate;
• and
• (b) irradiating the amorphous film with a laser beam to crystalize the amorphous film, wherein
• the step of (b) is a step of conveying the substrate with first to fourth conveying units while causing the substrate to float with the use of a flotation unit and irradiating the amorphous film with the laser beam,
• the substrate is conveyed from a first region to a second region with the use of the first conveying unit,
• the substrate is conveyed from the second region to a third region with the use of the second conveying unit,
• the substrate is conveyed from the third region to a fourth region with the use of the third conveying unit,
• the substrate is conveyed from the fourth region to the first region with the use of the fourth conveying unit,
• the substrate is irradiated with the laser beam while the substrate is being conveyed from the first region to the second region,
• the first conveying unit conveys the substrate with the first conveying unit holding the substrate at a position where the first conveying unit does not overlap an irradiation position of the laser beam as viewed in a plan view, and
• a holding mechanism included in the first conveying unit holds the workpiece by sucking a surface of the workpiece that is opposite to a surface to be irradiated with the laser beam.

A method of manufacturing a semiconductor device, the method comprising steps of:

• (a) forming an amorphous film on a substrate;
• and
• (b) irradiating the amorphous film with a laser beam to crystalize the amorphous film, wherein
• the step of (b) is a step of conveying the substrate with a conveying unit while causing the substrate to float with the use of a flotation unit and irradiating the amorphous film with the laser beam,
• the substrate has a quadrangular planar shape with four sides,
• the conveying unit includes a holding mechanism configured to hold the substrate,
• the holding mechanism holds only one of the four sides of the substrate and holds the substrate at a position where the substrate is not irradiated with the laser beam while the substrate is being conveyed, and
• a holding mechanism holds the workpiece by sucking a surface of the workpiece that is opposite to a surface to be irradiated with the laser beam.