Low keV ion beam image restoration by machine learning for object localization
AssigneeFEI Company
InventorsRemco Johannes Petrus Geurts, Pavel Potocek, Maurice Peemen, Ondrej Machek
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Abstract
Methods and systems for creating TEM lamella using image restoration algorithms for low keV FIB images are disclosed. An example method includes irradiating a sample with an ion beam at low keV settings, generating a low keV ion beam image of the sample based on emissions resultant from irradiation by the ion beam, and then applying an image restoration model to the low keV ion beam image of the sample to generate a restored image. The sample is then localized within the restored image, and a low keV milling of the sample is performed with the ion beam based on the localized sample within the restored image.
Claims20
A method, comprising:
- performing one or more milling steps on regions of a sample material to shape the sample material to form a sample with an ion beam operating at high keV settings;
- attaching the sample to a sample manipulation probe;
- detaching the sample from the sample material with the ion beam;
- irradiating the sample with the ion beam at low keV settings;
- generating a low keV ion beam image of the sample based on emissions resultant from irradiation by the ion beam;
- applying an image restoration model to the low keV ion beam image of the sample to generate a restored image;
- localizing the sample within the restored image;
- and
- performing, based on the localized sample within the restored image, a low keV milling of the sample with the ion beam.
A charged particle microscope system, comprising:
- a sample holder configured to hold a sample material;
- a ion source configured to irradiate the sample with an ion beam;
- an imaging system configured to capture images of the sample based on charged particles emitted by the sample in response to being irradiated with the ion beam;
- one or more processing units;
- and
- a memory storing computer readable instructions that, when executed by the one or more processing units, cause the charged particle microscope system to:
- perform one or more milling steps on regions of the sample material to shape the sample material to form a sample with the ion beam at high keV settings;
- attach the sample to a sample manipulation probe;
- detach the sample from the sample material with the ion beam;
- irradiate the sample with the ion beam at low keV settings;
- generate a low keV ion beam image of the sample based on emissions resultant from irradiation by the ion beam;
- apply an image restoration model to the low keV ion beam image of the sample to generate a restored image;
- localize the sample within the restored image;
- and
- perform, based on the localized sample within the restored image, a low keV milling of the sample with the ion beam.
A method, comprising:
- performing one or more milling steps on regions of a sample material to shape the sample material to shape a sample with an ion beam operating at high keV settings;
- attaching the sample to a sample manipulation probe;
- detaching, after the sample is attached to the sample manipulation probe, the sample from the sample material with the ion beam;
- irradiating, after the sample is detached from the sample material, the sample with the ion beam at low keV settings;
- generating a low keV ion beam image of the sample based on emissions resultant from irradiation by the ion beam;
- applying an image restoration model to the low keV ion beam image of the sample to generate a restored image;
- localizing the sample within the restored image;
- and
- performing, based on the localized sample within the restored image, a low keV milling of the sample with the ion beam.
Dependencies are inferred from the claim text.