Device for protecting FEOL element and BEOL element

A semiconductor device, comprising:

• a complementary metal-oxide-semiconductor (CMOS) device comprising:
• a semiconductor substrate;
• a front-end-of-the-line (FEOL) element disposed on the semiconductor substrate;
• a plurality of dielectric layers disposed on the semiconductor substrate;
• and
• a back-end-of-the-line (BEOL) element disposed in the dielectric layers;
• a conductive shielding layer disposed on the dielectric layers and above the FEOL element and the BEOL element but laterally offset from the FEOL element and the BEOL element;
• and
• a micro electromechanical system (MEMS) device disposed above the conductive shielding layer, the MEMS device comprising a MEMS element.

A semiconductor device, comprising:

• a complementary metal-oxide-semiconductor (CMOS) device comprising:
• a semiconductor substrate;
• a front-end-of-the-line (FEOL) element disposed on the semiconductor substrate;
• a plurality of dielectric layers disposed on the semiconductor substrate;
• and
• a back-end-of-the-line (BEOL) element disposed in the dielectric layers;
• a conductive shielding layer disposed on the dielectric layers but not directly above the FEOL element and BEOL element, wherein the conductive shielding layer is ground to the semiconductor substrate;
• an inter-layer dielectric (ILD) layer which is disposed on and covers the conductive shielding layer;
• and
• a micro electromechanical system (MEMS) device disposed on the ILD layer, the MEMS device comprising a MEMS element.