Free-form dual dual-conductor integrated radio frequency media
AssigneeRaytheon Company
InventorsDavid D. Heston, Mikel J. White, Michael G. Hawkins
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Abstract
A free-from radio frequency (RF) media includes a substrate having a first dielectric layer formed thereon and a second dielectric layer on an upper surface of the first dielectric layer. A first conductive layer is formed on an upper surface of the first dielectric layer and has a first overall profile. A second conductive layer having a second overall profile is formed on an upper surface of the second dielectric layer such that the second dielectric layer is interposed between the first and second conductive layers. The first overall profile of the first conductive layer is different from the second overall profile of the second conductive layer.
Claims14
A free-from radio frequency (RF) media comprising:
- a substrate including a first dielectric layer and a second dielectric layer on an upper surface of the first dielectric layer;
- a first conductive layer having a first overall profile formed on an upper surface of the first dielectric layer, the first conductive layer including a bottom mating portion having a first bottom profile and a bottom individual portion having a second bottom profile;
- a second conductive layer having a second overall profile formed on an upper surface of the second dielectric layer such that the second dielectric layer is interposed between the first and second conductive layers, the second conductive layer including a top mating portion having a first top profile and a top individual portion having a second top profile that matches the first bottom profile,
- wherein the first overall profile of the first conductive layer is different from the second overall profile of the second conductive layer, and
- wherein the first bottom profile matches as the first top profile, and the second bottom profile is mismatched with respect to the second top profile.
A method of fabricating a free-form radio frequency (RF) media, the method comprising:
- forming a bottom conductive layer having first overall profile on an upper surface of a bottom dielectric layer, the bottom conductive layer including a bottom mating portion having a first bottom profile and a bottom individual portion having a second bottom profile;
- forming a top dielectric layer on an upper surface of the bottom dielectric layer such that the top dielectric layer covers the bottom conductive layer, the top conductive layer to include a top mating portion having a first top profile and a top individual portion having a second top profile that matches the bottom mating profile;
- and
- forming a top conductive layer having a second overall profile on an upper surface of the top dielectric layer,
- wherein the first and second overall profiles are formed independently of one another, and
- wherein the first bottom profile is the same as the first top profile, and the second bottom profile is different from the second top profile.
Dependencies are inferred from the claim text.