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US 11,342,496 B2Granted
Semiconductor memory structure with magnetic tunneling junction stack and method for forming the same
AssigneeHeFeChip Corporation Limited
InventorsHong-Hui Hsu, Wei-Chuan Chen, Qinli Ma, Shu-Jen Han
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Abstract
A semiconductor memory structure includes a substrate, a magnetic tunneling junction (MTJ) stack disposed on the substrate, and an encapsulation layer surrounding the MTJ stack. The encapsulation layer comprises an outer silicon oxynitride layer with a composition of SiOx1Ny1 and an inner silicon oxynitride layer with a composition of SiOx2Ny2, wherein x1/y1>x2/y2.
Claims18
A semiconductor memory structure, comprising:
- a substrate;
- a magnetic tunneling junction (MTJ) stack disposed on the substrate;
- and
- an encapsulation layer surrounding the MTJ stack, wherein the encapsulation layer comprises an outer silicon oxynitride layer with a composition of SiOx1Ny1 and an inner silicon oxynitride layer with a composition of SiOx2Ny2, wherein x1/y1>x2/y2.
1 more element
A method for fabricating a semiconductor memory structure, comprising:
- providing a substrate;
- forming a magnetic tunneling junction (MTJ) stack on the substrate;
- and
- forming an encapsulation layer surrounding the MTJ stack, wherein the encapsulation layer comprises an outer silicon oxynitride layer with a composition of SiOx1Ny1 and an inner silicon oxynitride layer with a composition of SiOx2Ny2, wherein x1/y1>x2/y2.
1 more element
Dependencies are inferred from the claim text.