Resistive random-access memory device

A resistive random-access memory device comprising:

• a plurality of vertical members, extending in a vertical direction with respect to a main surface of a substrate and comprising a first conductivity type semiconductor material;
• a plurality of horizontal members, extending in a horizontal direction with respect to the main surface of the substrate and comprising a semiconductive material;
• and
• a memory cell, formed at each intersection of the plurality of vertical members and the plurality of horizontal members, wherein
• the memory cell comprises a gate insulating film formed on an outer periphery of the plurality of vertical members, a semiconductor film formed on an outer periphery of the gate insulating film and comprising a second conductivity type semiconductor material, and a variable resistance film formed on a part of an outer periphery of the semiconductor film, wherein an electrode region of an outer periphery of the variable resistance film is connected to one of a pair of horizontal members adjacent to each other, and the semiconductor film is connected to the other of the pair of horizontal members.