Bonding wire for semiconductor devices

Bonding wire for semiconductor devices consisting of:

• (C-3) P of 0.031 at% to less than 0.060 at% or (C-4) P of 0.031 at% to less than 0.060 at% and one or more of Be, B, Ca, Y, La, and Ce in a total of 0.031 at% to 0.180 at%;
• one or more of In, Ga, and Cd in a total of 0.05 at% to 5.00 at%;
• and
• a balance of Ag and unavoidable impurities,
• wherein when defining a ratio of the total of a number of atoms of In, Ga, and Cd with respect to a total number of atoms of metal elements as a second element atomic ratio, the bonding wire satisfies one or both of
• (A) the second element atomic ratio at a region from a wire surface to 1 nm from the wire surface in a depth direction is 1.1 times or more the second element atomic ratio at a region from 1 nm from the wire surface to 10 nm from the wire surface in the depth direction, and
• (B) the second element atomic ratio at a region from the wire surface to 10 nm from the wire surface in the depth direction is 2 times or more the second element atomic ratio at a region from 20 nm from the wire surface to 30 nm from the wire surface in the depth direction.

Bonding wire for semiconductor devices consisting of:

• (C-5) one or more of Be, B, Ca, Y, La, and Ce in a total of 0.031 at% to 0.180 at%;
• one or more of In, Ga, and Cd in a total of 0.05 at% to 5.00 at%;
• and
• a balance of Ag and unavoidable impurities,
• wherein when defining a ratio of the total of a number of atoms of In, Ga, and Cd with respect to a total number of atoms of metal elements as a second element atomic ratio, the bonding wire satisfies one or both of
• (A) the second element atomic ratio at a region from a wire surface to 1 nm from the wire surface in a depth direction is 1.1 times or more the second element atomic ratio at a region from 1 nm from the wire surface to 10 nm from the wire surface in the depth direction, and
• (B) the second element atomic ratio at a region from the wire surface to 10 nm from the wire surface in the depth direction is 2 times or more the second element atomic ratio at a region from 20 nm from the wire surface to 30 nm from the wire surface in the depth direction.