Photomask, method of fabricating a photomask, and method of fabricating a semiconductor structure using a photomask

A protection layer for extreme ultra-violet (EUV) photomask, comprising:

• an adhesive layer, wherein the adhesive layer comprises a conductive dopant consisting of a metallic ion or a graphene;
• a thermoplastic layer over the adhesive layer;
• a hydrophobic layer over the thermoplastic layer,
• wherein the thermoplastic layer comprises polymer layer having a crystalline-non crystalline conversion temperature in a range of from about 50 to 60 degrees Celsius.

A method for fabricating a photomask, comprising:

• providing a photomask, comprising a substrate having a first surface and a second surface opposite to the first surface, an extreme ultra-violet(EUV) reflective layer, and a patterned mask layer over the first surface of the substrate;
• forming a first protection layer over a first sidewall of the substrate, wherein the first sidewall connects between the first surface and the second surface, wherein the first protection layer comprises an adhesive layer facing the first sidewall;
• and
• forming a second protection layer over a second sidewall of the substrate, wherein the second sidewall connects between the first surface and the second surface, wherein a corner of the substrate between the first sidewall and the second sidewall is exposed from the first protection layer and the second protection layer.