Method of manufacturing a semiconductor element front side electrode
AssigneeMitsubishi Electric Corporation
InventorsMasatoshi Sunamoto, Ryuji Ueno
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Abstract
Provided is a semiconductor element including: a front-back conduction-type substrate including a front-side electrode and a back-side electrode; and an electroless plating layer formed on at least one of the electrodes of the front-back conduction-type substrate. The electroless plating layer includes: an electroless nickel-phosphorus plating layer; and an electroless gold plating layer formed on the electroless nickel-phosphorus plating layer, and has a plurality of recesses formed on a surface thereof to be joined with solder.
Claims6
A method of manufacturing a semiconductor element, comprising the steps of:
- forming a front-side electrode on a front-back conduction-type substrate;
- and
- sequentially forming an electroless nickel-phosphorus plating layer and an electroless gold plating layer on the front-side electrode,
- wherein the step of forming the electroless nickel-phosphorus plating layer on the front-side electrode comprises performing an electroless nickel-phosphorus plating treatment while increasing at least one selected from the group consisting of a nickel concentration, a pH, and a stirring rate of an electroless nickel-phosphorus plating solution.
A method of manufacturing a semiconductor element, comprising the steps of:
- forming a front-side electrode on a front-back conduction-type substrate;
- and
- sequentially forming an electroless nickel-phosphorus plating layer and an electroless gold plating layer on the front-side electrode, wherein
- the step of forming the electroless nickel-phosphorus plating layer on the front-side electrode comprises performing an electroless nickel-phosphorus plating treatment while changing at least one selected from the group consisting of a rocking rate and a rocking width.
Dependencies are inferred from the claim text.