Photodetector and lidar device comprising a detector having a PN junction connected to an optically transmissive quench resistor
AssigneeKabushiki Kaisha Toshiba
InventorsMasaki Atsuta, Kazuhiro Suzuki, Ikuo Fujiwara, Honam Kwon, Keita Sasaki, Yuki Nobusa
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Abstract
A photodetector according to the present embodiment includes a plurality of light detectors. Each light detector has a first semiconductor layer of a first conductive type and a second semiconductor layer of a second conductive type different from the first conductive type, in which the first semiconductor layer and the second semiconductor layer constitute a PN junction. The photodetector further includes a quench resistor that is optically transmissive and connected to the second semiconductor layer.
Claims12
A photodetector comprising:
- a light detector having a first semiconductor layer of a first conductive type and a second semiconductor layer of a second conductive type different from the first conductive type, in which a first surface of the second semiconductor layer and the first semiconductor layer constitute a PN junction;
- and
- a quench resistor being optically transmissive and connected to the second semiconductor layer.
A lidar device comprising:
- a light source that emits light to an object;
- and
- a photodetector configured to receive reflected light of the light and including a light detector having a first semiconductor layer of a first conductive type and a second semiconductor layer of a second conductive type different from the first conductive type, in which the first semiconductor layer and the second semiconductor layer constitute a PN junction, and a quench resistor being optically transmissive and having one end connected to the second semiconductor layer.
Dependencies are inferred from the claim text.