Direct-bonded LED structure contacts and substrate contacts

A process, comprising:

• building semiconductor layers of LED structures on a first substrate;
• patterning the first substrate with a resist and etching the first substrate to expose an n-type semiconductive layer of each LED structure;
• depositing a silicon oxide layer to cover both a p-type semiconductive layer and the exposed n-type semiconductive layer of each LED structure;
• patterning and etching the silicon oxide over the p-type semiconductive layer and the n-type semiconductive layer of each LED structure to form cavities in the silicon oxide down to the surfaces of the p-type semiconductive layer and the n-type semiconductive layer of each LED structure;
• metalizing the cavities in the silicon oxide;
• planarizing the silicon oxide and the metalized cavities to make a flat bonding surface with coplanar contacts of the p-type semiconductive layer and the n-type semiconductive layer of each LED structure;
• plasma-activating a surface of the first substrate;
• bonding the activated surface to a second substrate;
• and
• annealing the bonded substrate to make a direct-bonded LED array display.

A process, comprising:

• forming semiconductor layers of LED structures on a surface of a first substrate;
• forming an exposed n-type semiconductive layer of each LED structure within the semiconductor layers of each LED structure;
• forming an exposed p-type semiconductive layer of each LED structure within the semiconductor layers of each LED structure;
• forming a planarized damascene layer with coplanar damascene conductive areas respectively contacting the exposed n-type semiconductive layer and the exposed p-type semiconductive layer of each LED structure;
• and
• bonding the coplanar damascene conductive areas to a surface of a second substrate.