Back to results
US 11,320,736 B2Granted
Pattern forming material and pattern forming method
AssigneeKioxia Corporation
InventorsRyosuke Yamamoto, Seiji Morita, Norikatsu Sasao, Koji Asakawa, Tomoaki Sawabe, Shinobu Sugimura
Life of this patent
Estimating the term…
Abstract
A pattern forming material according to an embodiment is a pattern forming material comprising a polymer composed of a plurality of monomer units bonded to each other. Each of the monomer units includes an ester structure having a first carbonyl group and at least one second carbonyl group bonded to the ester structure. A second carbonyl group farthest from a main chain of the polymer constituting the pattern forming material among second carbonyl groups is in a linear chain state.
Claims12
A pattern forming method comprising:
- coating a pattern forming material on a processing target material, the pattern forming material having a polymer comprising a plurality of monomer units bonded to each other, the bonded monomer units each including:
- an ester structure having a first carbonyl group;
- and
- at least one second carbonyl group bonded to the ester structure as a side chain(s), and a second carbonyl group among second carbonyl groups,
- which is farthest from a main chain of the polymer constituting the pattern forming material, being in a linear chain state;
- patterning the pattern forming material;
- exposing the patterned pattern forming material to gas or liquid of a metallic precursor to cause the pattern forming material to contain metal;
- and
- processing the processing target material using the pattern forming material containing the metal as a mask;
- wherein
- in the patterning, the pattern forming material is patterned using a CDE (Chemical Dry Etching) or an RIE (Reactive Ion Etching) process.
8 more elements
Dependencies are inferred from the claim text.