Area selective deposition of metal containing films

A composition for selective deposition of a metal-containing film comprising a precursor having the formula:

• LxM(-N(R)—(CR′2)n—NR″2)
• wherein M is a Group 12, Group 13, Group 14, Group 15, Group IV or Group V element;
• x+1 is the oxidation state of the M;
• L is an anionic ligand, independently selected from dialkylamine, alkoxy, alkylimine, bis(trialkylsilylamine), amidinate, betadiketonate, keto-imine, halide, or the like;
• R, R″ each are independently a C1-C10 linear, branched or cyclic alkyl, alkenyl, or trialkylsilyl group;
• R′ is H or a C1-C10 linear, branched or cyclic alkyl, alkenyl or trialkylsilyl group;
• n=1-4.

A process of selectively depositing Al2O3 film, the process comprising the steps of:

• a) providing a surface having at least one dielectric material and at least one metal material exposed thereon simultaneously;
• b) exposing the surface to a vapor of (NMe2)2Al(-NEt-(CH2)2-NEt2);
• and
• c) exposing the surface to a co-reactant H2O, wherein the at least one dielectric material is at least partially blocked by a blocking agent dimethyldichlorosilane (DMDCS) from the deposition of the Al2O3 film through an ALD process.