Method for forming circuits using seed layer and etchant composition for selective etching of seed layer

A method of forming a circuit using a seed layer, comprising:

• forming a first seed layer of a first conductive material on each side of a carrier member;
• forming a first circuit pattern by forming a pattern layer with a pattern groove, through which the first seed layer is selectively exposed, on the first seed layer and by plating the pattern groove with a second conductive material;
• forming a resin layer on the first circuit pattern;
• and
• removing the first seed layer to separate the carrier member by etching the first seed layer,
• the first conductive material and the second conductive material being different in material from each other;
• wherein the removing the first seed layer comprises dissolving and removing the first seed layer by an etching solution capable of dissolving only the first conductive material;
• wherein the first conductive material comprises silver (Ag), and the second conductive material comprises copper (Cu),
• wherein the etching solution composition comprises:
• 1˜30 wt % of an oxidizing agent comprising oxidative gas, peroxides, or peracid,
• 1˜15 wt % of aliphatic amine or aromatic amine or alkanol amine compound,
• 0.1˜7 wt % of a chealate agent, defoamer, humectant, pH regulator and one or more other additives for improving etching performance of an etching solution, and
• water added as a remainder of a total 100 wt % of the etching solution composition;
• wherein the oxidizing agent comprises at least one of oxidative gas such as air, oxygen, ozone, and the like;
• peroxides such as sodium perborate, hydrogen peroxide, sodium bismuthate, sodium percarbonate, benzoyl peroxide, potassium peroxide, sodium peroxide and the like;
• peroxy acid such as formic acid, peroxyacetic acid, perbenzoic acid, 3-chloroperoxybenzoic acid, trimethylacetic acid and the like;
• and potassium persulfate;
• wherein the compound comprises at least one of ethylamine, propylamine, isopropylamine, n-butylamine, isobutylamine, sec-butylamine, diethylamine, piperidine, tyramine, N-methyltyramine, pyrroline, pyrrolidine, imidazole, indole, pyrimidine, ethanolamine, 6-amino-2-methyl-2-heptanol, 1-amino-2-propanol, methanolamine, dimethylethanolamine, N-methylethanolamine, 1-aminoethanol, 2-amino-2-methyl-1-propanol.

A method of forming a circuit using a seed layer, comprising:

• forming a first seed layer with a first conductive material of silver (Ag) on each side of a carrier member;
• forming a first circuit pattern with a second conductive material of copper (Cu) on the first seed layer;
• forming a second seed layer with the first conductive material of silver (Ag) on an inner side of a separately provided protective layer;
• forming a resin layer between the second seed layer and the first circuit pattern;
• adhering the second seed layer, the resin layer, and the first circuit pattern which are disposed in sequence;
• forming a via hole penetrating through the protective layer, the second seed layer, and the resin layer to expose a portion of the first circuit pattern;
• forming a current carrying portion electrically connecting the first circuit pattern and the second seed layer by filling a conductive material in the via hole;
• removing the protective layer;
• forming a second circuit pattern with the second conductive material on the second seed layer;
• and
• removing the first seed layer by an etching solution capable of dissolving only the first conductive material to separate the carrier member,
• the first conductive material and the second conductive material being different in material from each other;
• wherein the etching solution composition comprises:
• 1˜30 wt % of an oxidizing agent comprising oxidative gas, peroxides, or peracid,
• 1˜15 wt % of aliphatic amine or aromatic amine or alkanol amine compound,
• 0.1˜7 wt % of a chealate agent, defoamer, humectant, pH regulator and one or more other additives for improving etching performance of an etching solution, and
• water added as a remainder of a total 100 wt % of the etching solution composition;
• wherein the oxidizing agent comprises at least one of oxidative gas such as air, oxygen, ozone, and the like;
• peroxides such as sodium perborate, hydrogen peroxide, sodium bismuthate, sodium percarbonate, benzoyl peroxide, potassium peroxide, sodium peroxide and the like;
• peroxy acid such as formic acid, peroxyacetic acid, perbenzoic acid, 3-chloroperoxybenzoic acid, trimethylacetic acid and the like;
• and potassium persulfate;
• wherein the compound comprises at least one of ethylamine, propylamine, isopropylamine, n-butylamine, isobutylamine, sec-butylamine, diethylamine, piperidine, tyramine, N-methyltyramine, pyrroline, pyrrolidine, imidazole, indole, pyrimidine, ethanolamine, 6-amino-2-methyl-2-heptanol, 1-amino-2-propanol, methanolamine, dimethylethanolamine, N-methylethanolamine, 1-aminoethanol, 2-amino-2-methyl-1-propanol.