Relaxor ferroelectric capacitors and methods of fabrication

A capacitor device, comprising:

• a first electrode comprising a first metal alloy or a first metal oxide;
• a multilayer stack adjacent the first electrode, the multilayer stack comprising:
• a bilayer stack comprising a first ferroelectric layer, the first ferroelectric layer comprising a first relaxor ferroelectric material comprising a combination of bismuth, sodium, titanium, and oxygen and a second ferroelectric layer on the first relaxor ferroelectric layer;
• and
• a third ferroelectric layer on the bilayer stack, the third ferroelectric layer comprising a second relaxor ferroelectric material that is substantially the same as the first relaxor ferroelectric material;
• and
• a second electrode coupled with the third relaxor ferroelectric layer, the second electrode comprising a second metal alloy or a second metal oxide.

A system comprising:

• an integrated circuit comprising a capacitor device comprising:
• a first electrode comprising a first metal alloy or a first metal oxide;
• a ferroelectric layer coupled with the first electrode, the ferroelectric layer comprising a combination of bismuth, sodium, titanium, and oxygen;
• and
• a second electrode coupled with the ferroelectric layer, the second electrode comprising a second metal alloy or a second metal oxide;
• and
• a display device coupled to the integrated circuit, the display device to display an image based on a signal communicated with the integrated circuit.