Field-effect transistor with a total control of the electrical conductivity on its channel
AssigneeLuxembourg Institute of Science and Technology (List)
InventorDamien Lenoble
Life of this patent
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Abstract
The first object of the invention is directed to field-effect gate transistor comprising (a) a substrate, (b) a source terminal, (c) a drain terminal, and (d) a channel between the source terminal and the drain terminal, the channel being a layer of CuxCryO2 in which the y/x ratio is superior to 1. The field-effect gate transistor is remarkable in that the channel of CuxCryO2 presents a gradient of holes concentration. The second object of the invention is directed to a method for laser annealing a field-effect gate transistor in accordance with the first object of the invention.
Claims14
A field-effect gate transistor, said field-effect gate transistor comprising:
- a substrate;
- a source terminal;
- a drain terminal;
- and
- a channel between the source terminal and the drain terminal, the channel being a layer of CuxCryO2 in which the y/x ratio is greater than 1,
- wherein the channel of CuxCryO2 presents a gradient of positive charge carrier concentration.
A method for laser annealing a field-effect gate transistor, comprising the steps of
- (a) providing a field-effect gate transistor with a channel as external surface of the field-effect gate transistor, the channel being made of CuxCryO2 wherein the y/x ratio is greater than 1;
- and
- (b) irradiating the channel with a laser beam,
- wherein in step (b), the channel is irradiated by scanning the surface of the channel non-homogeneously with regard to the local annealing temperature and/or annealing time.
Dependencies are inferred from the claim text.