Method for forming insulating film, apparatus for processing substrate, and system for processing substrate
AssigneeTokyo Electron Limited
InventorsMakoto Muramatsu, Hisashi Genjima
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AssigneeTokyo Electron Limited
InventorsMakoto Muramatsu, Hisashi Genjima
Estimating the term…
There is provided a technique of forming an insulating film containing silicon oxide. A coating solution containing polysilazane is applied onto a wafer W, the solvent of the coating solution is volatilized, and the coating film is irradiated with ultraviolet rays in nitrogen atmosphere before performing a curing process. Dangling bonds are generated in silicon which is a pre-hydrolyzed site in polysilazane. Therefore, the energy for hydrolysis is reduced, and unhydrolyzed sites are reduced even when the temperature of the curing process is 350° C. Since efficient dehydration condensation occurs, the crosslinking rate is improved, and a dense (good-quality) insulation film is formed. By forming a protective film on the surface of the coating film to which ultraviolet rays irradiated, the reaction of dangling bonds prior to the curing process is suppressed.
A method of forming an insulating film, the method comprising:
Dependencies are inferred from the claim text.